A Mathematical Model for Epitaxial Semiconductor Crystal Growth from the Vapor Phase on a Masked Substrate

Abstract

Certain materials used in lasers are made by a process called epitaxial semiconductor crystal growth. In this report a mathematical model is developed for this growth process which occurs on a substrate at the junction between a masked region and exposed substrate in a vapor. This new model consists of two partial differential equations; one for the surface dynamics and one for the crystal growth on the exposed substrate. An analysis of the steady state solutions is furnished. Approximate solutions for time-dependent cases are found using two numerical methods. An asymptotic analysis is also carried out to determine transient solution behavior. The undesireable "bump" structure at the mask/substrate junction which has been observed experimentally is present in the solutions found by each method.