eprintid: 115
rev_number: 4
eprint_status: archive
userid: 5
dir: disk0/00/00/01/15
datestamp: 2007-07-09
lastmod: 2015-05-29 19:47:35
status_changed: 2009-04-08 16:54:22
type: report
metadata_visibility: show
item_issues_count: 0
creators_name: van Beckum, F.P.H.
creators_name: Boersma, J.
creators_name: Habets, L.C.G.J.M.
creators_name: Meinsma, G.
creators_name: Molenaar, J.
creators_name: Schilders, W.H.A
creators_name: van de Ven, A.A.F.
title: On compact models for high-voltage MOS devices
ispublished: pub
subjects: telecom
studygroups: esgi36
companyname: Philips NatLab
full_text_status: public
abstract: Fast evaluation of integrated  circuits(ICs) requires the validity of so-called compact models, i.e. simple-to-evaluate relations between the voltages and the currents in the IC-components.  In this paper the compact model for a particular IC part, the LDMOS device, is studied.
date: 1999-11-19
date_type: published
pages: 13
citation:   van Beckum, F.P.H. and Boersma, J. and Habets, L.C.G.J.M. and Meinsma, G. and Molenaar, J. and Schilders, W.H.A and van de Ven, A.A.F.  (1999) On compact models for high-voltage MOS devices.  [Study Group Report]     
document_url: http://miis.maths.ox.ac.uk/miis/115/1/MOS_devices.pdf