eprintid: 23
rev_number: 4
eprint_status: archive
userid: 4
dir: disk0/00/00/00/23
datestamp: 2004-06-10
lastmod: 2015-05-29 19:45:34
status_changed: 2009-04-08 16:52:05
type: report
metadata_visibility: show
item_issues_count: 0
creators_name: Budd, C.J.
creators_name: Richardson, G.
contributors_name: Dellar, P.
contributors_name: Lacey, A.A.
contributors_name: Ockendon, J.R.
contributors_name: Shillor, M.
contributors_name: Weiss, J.
title: Modelling of plasmas used for etching semiconductors
ispublished: pub
subjects: other
studygroups: esgi46
companyname: Trikon
full_text_status: public
problem_statement: A process used by Trikon to etch a semiconductor comprises a plasma chamber in which radicals and electrons are produced through ionisation in a plasma. These then migrate onto a silicon wafer, leading to etching through chemical action. Power for this process comes from an external radiofrequency source which causes skin heating of the gas inside the chamber. The gas in the device is primarily oxygen, with a flow rate that can be controlled as part of the process. The main questions posed to the Study Group were how the process depends on the gas flow, the RF heating power and the gas pressure.
date: 2003-04
date_type: published
pages: 14
citation:   Budd, C.J. and Richardson, G.  (2003) Modelling of plasmas used for etching semiconductors.  [Study Group Report]     
document_url: http://miis.maths.ox.ac.uk/miis/23/1/PlasmaEtching.pdf