eprintid: 398
rev_number: 10
eprint_status: archive
userid: 7
dir: disk0/00/00/03/98
datestamp: 2011-11-30 12:01:55
lastmod: 2015-05-29 20:01:15
status_changed: 2011-11-30 12:01:55
type: report
metadata_visibility: show
item_issues_count: 0
creators_name: French, D.A.
creators_name: Pelesko, J.A.
creators_name: Braun, R.
title: A Mathematical Model for Epitaxial Semiconductor Crystal Growth from the Vapor Phase on a Masked Substrate
ispublished: pub
subjects: materials
studygroups: mpi15
full_text_status: public
abstract: Certain materials used in lasers are made by a process called epitaxial semiconductor crystal growth. In this report a mathematical model is developed for this growth process which occurs on a substrate at the junction between a masked region and exposed substrate in a vapor. This new model consists of two partial differential equations; one for the surface dynamics and one for the crystal growth on the exposed substrate. An analysis of the steady state solutions is furnished. Approximate solutions for time-dependent cases are found using two numerical methods. An asymptotic analysis is also carried out to determine transient solution behavior. The undesireable "bump" structure at the mask/substrate junction which has been observed experimentally is present in the solutions found by each method.
date: 1999
citation:   French, D.A. and Pelesko, J.A. and Braun, R.  (1999) A Mathematical Model for Epitaxial Semiconductor Crystal Growth from the Vapor Phase on a Masked Substrate.  [Study Group Report]     
document_url: http://miis.maths.ox.ac.uk/miis/398/1/Epitaxial-semiconductor-crystal-growth.pdf