?url_ver=Z39.88-2004&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Adc&rft.relation=http%3A%2F%2Fmiis.maths.ox.ac.uk%2Fmiis%2F286%2F&rft.title=Compact+Modeling+for+a+Double+Gate+MOSFET&rft.creator=Ahmed%2C+Saleem&rft.creator=Breward%2C+Chris&rft.creator=Crowdy%2C+Darren&rft.creator=Cumberbatch%2C+Ellis&rft.creator=Davis%2C+Anthony&rft.creator=Fehribach%2C+Joseph+D.&rft.creator=Grigsby%2C+Mike&rft.creator=Hall%2C+Cameron&rft.creator=Smith%2C+Stefan+Llewellyn&rft.subject=Information+and+communication+technology&rft.description=MOSFETs+(metal-oxide-silicon+field-effect+transistors)+are+an+integral+part+of+modern+electronics.+Improved+designs+are+currently+under+investigation%2C+and+one+that+is+promising+is+the+double+gate+MOSFET.%0D%0A%0D%0AUnderstanding+device+characteristics+is+critical+for+the+design+of+MOSFETs+as+part+of+design+tools+for+integrated+circuits+such+as+SPICE.+Current+methods+involve+the+numerical+solution+of+PDEs+governing+electron+transport.+Numerical+solutions+are+accurate%2C+but+do+not+provide+an+appropriate+way+to+optimize+the+design+of+the+device%2C+nor+are+they+suitable+for+use+in+chip+simulation+software+such+as+SPICE.+As+chips+contain+more+and+more+transistors%2C+this+problem+will+get+more+and+more+acute.%0D%0A%0D%0AThere+is+hence+a+need+for+analytic+solutions+of+the+equations+governing+the+performance+of+MOSFETs%2C+even+if+these+are+approximate.+Almost+all+solutions+in+the+literature+treat+the+long-channel+case+(thin+devices)+for+which+the+PDEs+reduce+to+ODEs.+The+goal+of+this+problem+is+to+produce+analytical+solutions+based+on+the+underlying+PDEs+that+are+rapid+to+compute+(e.g.+require+solving+only+a+small+number+of+algebraic+equations+rather+than+systems+of+PDEs).%0D%0A%0D%0AGuided+by+asymptotic+analysis%2C+a+fast+numerical+procedure+has+been+developed+to+obtain+approximate+solutions+of+the+governing+PDEs+governing+MOSFET+properties%2C+namely+electron+density%2C+Fermi+potential+and+electrostatic+potential.+The+approach+depends+on+the+channel%E2%80%99s+being+long+enough%2C+and+appears+accurate+in+this+limit.&rft.date=2009&rft.type=Study+Group+Report&rft.type=NonPeerReviewed&rft.format=application%2Fpdf&rft.language=en&rft.identifier=http%3A%2F%2Fmiis.maths.ox.ac.uk%2Fmiis%2F286%2F1%2F6_Information_Science_Institute.pdf&rft.identifier=++Ahmed%2C+Saleem+and+Breward%2C+Chris+and+Crowdy%2C+Darren+and+Cumberbatch%2C+Ellis+and+Davis%2C+Anthony+and+Fehribach%2C+Joseph+D.+and+Grigsby%2C+Mike+and+Hall%2C+Cameron+and+Smith%2C+Stefan+Llewellyn++(2009)+Compact+Modeling+for+a+Double+Gate+MOSFET.++%5BStudy+Group+Report%5D+++++