The MIIS Eprints Archive

On compact models for high-voltage MOS devices

van Beckum, F.P.H. and Boersma, J. and Habets, L.C.G.J.M. and Meinsma, G. and Molenaar, J. and Schilders, W.H.A and van de Ven, A.A.F. (1999) On compact models for high-voltage MOS devices. [Study Group Report]



Fast evaluation of integrated circuits(ICs) requires the validity of so-called compact models, i.e. simple-to-evaluate relations between the voltages and the currents in the IC-components. In this paper the compact model for a particular IC part, the LDMOS device, is studied.

Item Type:Study Group Report
Problem Sectors:Information and communication technology
Study Groups:European Study Group with Industry > ESGI 36 (Eindhoven, Netherlands, Nov 15-19, 1999)
Company Name:Philips NatLab
ID Code:115
Deposited By: Richard Booth
Deposited On:09 Jul 2007
Last Modified:29 May 2015 19:47

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